High mobility in a van der Waals layered antiferromagnetic metal
High mobility in a van der Waals layered antiferromagnetic metal
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DOI：
10.1126/sciadv.aay6407
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发表时间：
2020-02-01
期刊：
影响因子：
13.6
通讯作者：
Schoop, Leslie M.
中科院分区：
文献类型：
--
作者：
Lei, Shiming;Lin, Jingjing;Schoop, Leslie M.
具有磁有序性的货车范德瓦耳斯（vdW）材料在基础物理学和器件设计中一直受到广泛关注。尽管进展迅速，但到目前为止，它们主要是绝缘或半导体，并且没有一种具有高电子迁移率-这在一般的层状vdW材料中是罕见的。实现高迁移率的vdW材料，也表现出磁秩序将打开新的磁性双电子或自旋电子器件的可能性。在这里，我们报告非常高的载流子迁移率在层状VDW反铁磁体GdTe 3。电子迁移率超过60，000 cm（2）V（-1）s（-1），据我们所知，这是所有已知的层状磁性材料中最高的。在所有已知的vdW材料中，大块GdTe 3的迁移率与黑磷的迁移率相当。通过机械剥离，我们进一步证明了GdTe 3可以剥离成三个单层的片状。
Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility-a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe3. The electron mobility is beyond 60,000 cm(2)V(-1)s(-1), which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe3 is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe3 can be exfoliated to ultrathin flakes of three monolayers.