Design of interfacial Cr3C2 carbide layer via optimization of sintering parameters used to fabricate copper/diamond composites for thermal management applications
Design of interfacial Cr3C2 carbide layer via optimization of sintering parameters used to fabricate copper/diamond composites for thermal management applications
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DOI：
10.1016/j.matdes.2017.02.005
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发表时间：
2017-04-15
影响因子：
8.4
通讯作者：
Michalski, Andrzej
中科院分区：
文献类型：
--
作者：
Ciupinski, Lukasz;Kruszewski, Miroslaw J.;Michalski, Andrzej
为了制备具有高热导率的金属-金刚石复合材料，在金属基体和金刚石之间存在高质量的碳化物界面是重要的。向基体中添加碳化物形成元素对界面热导率有积极影响，是提高复合材料体相热导率的有效方法。将金刚石粉末与Cu 0.65Cr合金粉末以1：1的体积比混合。通过优化脉冲等离子烧结（PPS）工艺参数，控制金刚石与基体间的碳化物界面。利用扫描电子显微镜（SEM）和X射线衍射仪（XRD）分析了材料的微观结构和相组成。界面层，其特征在于使用SEM和聚焦离子束（FIB）技术。估计基体的残余Cr含量，以确定其对基体的热性能的影响。为了计算ITC，使用微分有效介质（DEM）和Hasselman-Johnson（H-J）模型。最高的热导率为687 W m（-1）K-1，是通过在850摄氏度下在10分钟内制造的复合材料实现的，其具有81 nm厚的界面碳化物层。获得的ITCDEM值为5.10（7）W m（-2）K-1。2017 Elsevier Ltd.（C）2017 Elsevier Ltd.版权所有。
To produce metal-diamond composite materials with high thermal conductivity, it is important for a high-quality carbide interface to exist between the metal matrix and diamond. The addition of carbide-forming elements to the matrix positively influences the interfacial thermal conductance (ITC), and is an effective method for improving the bulk thermal conductivity of composite materials. Diamond powder was mixed with Cu0.65Cr alloy powder, using a 1:1 volume ratio. The pulse plasma sintering (PPS) parameters were optimized to control the carbide interface between the diamond and matrix. The microstructures and phase compositions of the fabricated materials were examined using scanning electron microscopy (SEM) and X-ray diffraction (XRD). The interfacial layer was characterized using SEM and focused ion beam (FIB) techniques. The residual Cr content of the matrix was estimated, to determine its influence on the thermal properties of the matrix. To calculate the ITC, differential effective medium (DEM) and Hasselman-Johnson (H-J) models were used. The highest thermal conductivity of 687 W m(-1) K-1 was achieved by a composite material that was fabricated at 850 degrees C over a period of 10 min, which had an 81-nm-thick interfacial carbide layer. An ITCDEM value of 5.10(7) W m(-2) K-1 was obtained. 2017 Elsevier Ltd. (C) 2017 Elsevier Ltd. All rights reserve.