Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor
Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor
复制标题
隧道场效应晶体管的低温微波退火
DOI：
10.1109/led.2014.2386213
复制
发表时间：
2015
影响因子：
4.9
通讯作者：
M. Yeh
中科院分区：
文献类型：
--
作者：
Y. Jhan;Yung;Yu;Yao;Min;Hsin;Yu;M. Yeh
与掺杂剂的高温激活（例如快速热退火（RTA））不同，通过低温微波退火（MWA）激活掺杂剂抑制其扩散，从而减小屏蔽隧穿长度（λ）。这封信比较了鳍形多晶硅（Poly-Si）隧道场效应晶体管（TFET）的低温（490 ° C）MWA和高温（1050 °C）RTA。带间隧穿电压（VBTBT）表明MWA退火的TFET比RTA退火的TFET具有更低的λ。通过MWA退火的TFET具有108的高ON/OFF电流比、低的亚阈值摆幅和几乎可以忽略的漏致势垒降低。
Unlike the high-temperature activation of dopants, such as rapid thermal annealing (RTA), the activation of dopants by low-temperature microwave annealing (MWA) suppresses their diffusion, reducing screening tunneling length (λ). This letter compares low-temperature (490 °C) MWA with high-temperature (1050 °C) RTA of a fin-shaped polycrystalline silicon (Poly-Si) tunnel field-effect transistor (TFET). The band-to-band tunneling voltage (VBTBT) indicates clearly that TFET annealed by MWA had a lower λ than TFET that was annealed by RTA. The TFET that was annealed by MWA had a high ON/OFF current ratio of 108, a low subthreshold swing, and an almost negligible drain-induced barrier lowering.