Extremely Low‐Threshold Amplified Spontaneous Emission of 9,9′‐Spirobifluorene Derivatives and Electroluminescence from Field‐Effect Transistor Structure
Extremely Low‐Threshold Amplified Spontaneous Emission of 9,9′‐Spirobifluorene Derivatives and Electroluminescence from Field‐Effect Transistor Structure
复制标题
DOI：
10.1002/adfm.200700069
复制
发表时间：
2007-09
影响因子：
19
通讯作者：
H. Nakanotani;Seiji Akiyama;D. Ohnishi;M. Moriwake;M. Yahiro;Toshitada Yoshihara;S. Tobita;C. Adachi-C.-A
中科院分区：
文献类型：
--
作者：
H. Nakanotani;Seiji Akiyama;D. Ohnishi;M. Moriwake;M. Yahiro;Toshitada Yoshihara;S. Tobita;C. Adachi-C.-A
By doping 2,7‐bis[4‐(N‐carbazole)phenylvinyl]‐9,9′‐spirobifluorene (spiro‐SBCz) into a wide energy gap 4,4′‐bis(9‐carbazole)‐2,2′‐biphenyl (CBP) host, we demonstrate an extremely low ASE threshold of Eth = (0.11 ± 0.05) μJ cm–2 (220 W cm–2) which is the lowest ASE threshold ever reported. In addition, we confirmed that the spiro‐SBCz thin film functions as an active light emitting layer in organic light‐emitting diode (OLED) and a field‐effect transistor (FET). In particular, we succeeded to obtain linear electroluminescence in the FET structure which will be useful for future organic laser diodes.
