High-quality Co2FeSi0.5Al0.5/Si heterostructures for spin injection in silicon spintronic devices
High-quality Co2FeSi0.5Al0.5/Si heterostructures for spin injection in silicon spintronic devices
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DOI：
10.1016/j.tsf.2013.08.128
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发表时间：
2014-04-30
期刊：
影响因子：
2.1
通讯作者：
Hamaya, Kohei
中科院分区：
文献类型：
--
作者：
Tanikawa, Kohei;Oki, Soichiro;Hamaya, Kohei
为了实现硅基自旋电子学应用中的高性能自旋注入器，我们采用低温分子束外延（LTMBE）技术在Si（111）衬底上生长了四元Co基Heusler化合物Co2FeSi0.5Al0.5。在我们之前的研究中，Al共沉积诱导了Co2FeSi 1（-）Al-x（x）与Si之间的界面反应。在这里，我们显着改善Co2FeSi0.5Al0.5/Si异质结通过引入非化学计量LTMBE技术。同时获得了原子级光滑的Co2FeSi0.5Al0.5/Si异质界面和L2（1）有序的Co2FeSi0.5Al0.5薄膜。即使在生长条件下，Co2FeSi0.5Al0.5层的磁性能几乎相当于MgO上报道的热处理的那些。该研究为实现下一代硅基自旋电子器件的高自旋极化铁磁体/硅异质界面的优化提供了重要的知识。(c)2013爱思唯尔有限公司版权所有。
For high-performance spin injectors in silicon (Si)-based spintronic applications, we have explored the growth technique of quaternary Co-based Heusler-compound Co2FeSi0.5Al0.5 on Si(111) by using low-temperature molecular beam epitaxy (LTMBE). In our previous study, Al co-deposition induced an interfacial reaction between Co2FeSi1 (-) Al-x(x) and Si. Here, we dramatically improve the Co2FeSi0.5Al0.5/Si heterostructures by introducing a nonstoichiometric LTMBE technique. Atomically smooth Co2FeSi0.5Al0.5/Si heterointerfaces and L2(1)-ordered Co2FeSi0.5Al0.5 films are simultaneously achieved. Even in as-grown conditions, the magnetic properties of the Co2FeSi0.5Al0.5 layers are nearly equivalent to those of the heat-treated ones reported on MgO. This study gives important knowledge to realize the optimized highly spin-polarized ferromagnet/Si heterointerfaces for next-generation Si-based spintronic devices. (c) 2013 Elsevier B.V. All rights reserved.