Reliable, high gain-bandwidth product InGaAs/InP avalanche photodiodes for 10 Gb/s receivers

Reliable, high gain-bandwidth product InGaAs/InP avalanche photodiodes for 10 Gb/s receivers
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适用于 10 Gb/s 接收器的可靠、高增益带宽产品 InGaAs/InP 雪崩光电二极管

DOI：
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发表时间：
1999
期刊：
OFC/IOOC . Technical Digest. Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication
影响因子：
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通讯作者：
D. Thomas
D. Thomas
中科院分区：
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文献类型：
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作者：
W. Clark;A. Margittai;J. Noel;S. Jatar;H. Kim;E. Jamroz;G. Knight;D. Thomas

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研制了增益带宽积高达140 GHz、有效电离率比低、可靠性好的InGaAs/InP雪崩光电二极管（APD）。使用这些APD的接收机的灵敏度优于-27.5 dBm。
InGaAs/InP avalanche photodiodes (APDs) with gain-bandwidth products as high as 140 GHz, low effective ionization rate ratio and excellent reliability were fabricated. Receivers using these APDs had sensitivities better than -27.5 dBm.