Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment
Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment
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DOI：
10.1016/j.tsf.2010.07.107
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发表时间：
2010-10-29
期刊：
影响因子：
2.1
通讯作者：
Niwano, M.
中科院分区：
文献类型：
--
作者：
Hirose, F.;Kinoshita, Y.;Niwano, M.
通过具有多重内反射几何结构的红外吸收光谱研究了在接近室温下在 Si(100) 表面上以三(二甲氨基)硅烷 (TDMAS) 和臭氧为前体的 SiO2 原子层沉积。在室温下，TDMAS 可以吸附在羟基化硅表面的 OH 位上。经过 TDMAS 处理的 Si 表面的臭氧氧化可有效去除在室温下 TDMAS 吸附过程中引入的氢氨基碳吸附物。臭氧氧化后，在约 160 摄氏度的基板温度下用 H2O 蒸汽处理，导致 OH 位点再生，用于 TDMAS 吸附。涉及室温下 TDMAS 吸附和臭氧化，然后在 160 摄氏度下进行 H2O 处理的循环可以形成 SiO2 层。以经臭氧处理的Si表面作为起始表面，可以减少在生长的SiO 2 膜和衬底之间的界面处残留的氢氨基碳的量。 (C) 2010 Elsevier B.V. 保留所有权利。
Atomic layer deposition of SiO2 from tris(dimethylamino)silane (TDMAS) and ozone as precursors on Si(100) surfaces at near-room temperatures was studied by infrared absorption spectroscopy with a multiple internal reflection geometry. TDMAS can be adsorbed at OH sites on hydroxylated Si surfaces at room temperature. Ozone oxidation of the TDMAS-treated Si surface is effective in removing hydroaminocarbon adsorbates introduced during TDMAS adsorption at room temperature. After oxidation by ozone, treatment with H2O vapor at a substrate temperature of around 160 degrees C causes regeneration of OH sites for TDMAS adsorption. Cycles involving TDMAS adsorption and ozonization at room temperature followed by H2O treatment at 160 degrees C permit the buildup of layers of SiO2. The amount of residual hydroaminocarbon at the interface between the growing SiO2 film and the substrate can be reduced with the ozone treated Si surface as a starting surface. (C) 2010 Elsevier B.V. All rights reserved.