Magnetic force microscopy of single-domain cobalt dots patterned using interference lithography
Magnetic force microscopy of single-domain cobalt dots patterned using interference lithography
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DOI：
10.1109/20.538901
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发表时间：
1996-09-01
影响因子：
2.1
通讯作者：
Kania, DR
中科院分区：
文献类型：
--
作者：
Fernandez, A;Bedrossian, PJ;Kania, DR
我们利用干涉光刻技术制备了直径为100nm和70nm的Co点阵列。这些数组的密度是7.2x10(9)/in(2)。磁力显微镜测量表明，Co点是单畴的，其力矩可以控制指向平面内或平面外。干涉光刻是一种易于扩展到大面积的工艺，并且具有潜在的高吞吐量。大的、均匀的单畴结构阵列对于高密度、低噪声的数据存储是潜在的有用的。
We have fabricated arrays of Co dots having diameters of 100 nm and 70 nm using interference lithography. The density of these arrays is 7.2x10(9)/in(2). Magnetic force microscopy measurements indicate that the Co dots are single-domain with moments that can be controlled to point either in-plane or out-of-plane. Interference lithography is a process that is easily scaled to large areas and is potentially capable of high throughput. Large, uniform arrays of single-domain structures are potentially useful for high-density, low-noise data storage.