Observation of room‐temperature blue shift and bistability in a strained InGaAs‐GaAs 〈111〉 self‐electro‐optic effect device
Observation of room‐temperature blue shift and bistability in a strained InGaAs‐GaAs 〈111〉 self‐electro‐optic effect device
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应变InGaAs-GaAs<111>自电光效应器件的室温蓝移和双稳态观察
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
R. Morgan
中科院分区：
文献类型：
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作者：
K. Goossen;E. Caridi;T. Chang;J. Stark;D. Miller;R. Morgan
我们在< 111 > In0.1Ga0.9As‐GaAs p‐i‐n多量子阱调制器中观察到室温激子蓝移。我们还观察到由这些调制器组成的对称自电光效应器件电路的光诱导双稳性。仅施加0-3 V的偏压就获得了非常大（2.5:1）的光电流比。
We have observed room‐temperature exciton blue shift with applied voltage in a 〈111〉 In0.1Ga0.9As‐GaAs p‐i‐n multiple quantum well modulator. We have also observed optically induced bistability in a symmetric self‐electro‐optic effect device circuit composed of these modulators. Very large (2.5:1) ratios of photocurrent were obtained with only 0–3 V applied bias.