Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured In As Nanowires
Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured In As Nanowires
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As 纳米线结构的无缺陷闪锌矿的催化剂取向诱导生长
DOI：
10.1021/nl503556a
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发表时间：
2015
期刊：
影响因子：
10.8
通讯作者：
Zou Jin
中科院分区：
文献类型：
--
作者：
Zhang Zhi;Zheng Kun;Lu Zhen Yu;Chen Ping Ping;Lu Wei;Zou Jin
在本研究中，我们利用分子束磊晶技术，以Au为触媒，在GaAs {111} B基底上磊晶成长出无缺陷的Zn-InAs结构InAs奈米线。已经发现，催化剂和它们下面的{001 <$}纳米线具有{11 <$03}C//{002 <$} InAs和[3 <$302]C//[11 <$0] InAs的取向关系，这是由于它们在垂直于纳米线的{001 <$}原子平面的相应晶格间距之间的小的面内晶格失配，导致{001 <$}催化剂/纳米线界面的形成，并因此形成10001纳米线。该研究提供了一种通过仔细控制催化剂的晶相来操纵III-V族纳米线的晶体结构和结构质量的实用方法。
In this study, we demonstrate the epitaxial growth of ⟨001̅⟩ defect-free zinc-blende structured InAs nanowires on GaAs {111}Bsubstrate using Au catalysts in molecular beam epitaxy. It has been found that the catalysts and their underlying ⟨001̅⟩ nanowires have the orientation relationship of {11̅03}C//{002̅}InAsand [3̅302]C//[11̅0]InAsdue to their small in-plane lattice mismatches between their corresponding lattice spacings perpendicular to the {001̅} atomic planes of the nanowires, leading to the formation of the {001̅} catalyst/nanowire interfaces, and consequently the formation of ⟨001̅⟩ nanowires. This study provides a practical approach to manipulate the crystal structure and structural quality of III–V nanowires through carefully controlling the crystal phase of the catalysts.