In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking
In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking
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DOI：
10.1088/1361-6528/ab33d2
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发表时间：
2019-09
期刊：
影响因子：
3.5
通讯作者：
H. Long;Shunxiang Liu;Q. Wen;Huiyu Yuan;C. Tang;J. Qu;Sainan Ma;Wayesh Qarony;Longhui Zeng;Y. Tsang
中科院分区：
文献类型：
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作者：
H. Long;Shunxiang Liu;Q. Wen;Huiyu Yuan;C. Tang;J. Qu;Sainan Ma;Wayesh Qarony;Longhui Zeng;Y. Tsang
硒化铟（In_2Se_3）由于其良好的电子特性、宽的可调禁带、高的稳定性等优点而引起了人们的极大关注。然而，它在非线性光学中的进一步应用尚未得到充分的探索。在这项工作中，我们证明了少层α-In 2Se 3纳米片在800，1064和1550 nm的宽波长范围内表现出强的可饱和吸收特性。本实验所用的少层α-In 2Se 3纳米片是通过简单的液体超声剥离法制备的。分别在1064和1550 nm的掺镱和掺铒光纤激光器系统中获得了稳定的超快锁模激光脉冲。在掺铒光纤激光器系统中获得了215 fs的短脉冲宽度。在两个激光系统中获得了超过6小时的稳定输出脉冲。通过减小In 2Se 3的厚度，提高了激光输出脉冲的能量和峰值功率。这些结果表明，具有低层数的α-In 2Se 3纳米片是一种很有前途的超快光子学器件，如光开关、Q开关和锁模器。
Indium selenide (In2Se3) has attracted tremendous attention due to its favorable electronic features, broad tunable bandgap, high stability and other attractive properties. However, its further applications for nonlinear optics have not yet been fully explored. In this work, we demonstrate that few-layer α-In2Se3 nanosheets exhibit strong saturable absorption properties over a wide wavelength range covering 800, 1064 and 1550 nm. The few-layer α-In2Se3 nanosheets used for this experiment are fabricated via a simple ultrasonic exfoliation in liquid. Stable ultrafast mode-locking laser pulses are obtained from both ytterbium-doped and erbium-doped fiber laser systems operating at 1064 and 1550 nm, respectively. A pulse duration as short as 215 fs was achieved in the Er-doped fiber laser system. Stable output pulses over 6 h of operation were obtained in both laser systems. The pulse energy and peak power of the laser output pulses were increased by reducing the In2Se3 thickness. These results indicate that α-In2Se3 nanosheets with low layer numbers are promising candidates for broad ultrafast photonics devices, such as optical switchers, Q-switchers and mode lockers.