Compact Hierarchical Bipolar Transistor Modeling With HiCUM
Compact Hierarchical Bipolar Transistor Modeling With HiCUM
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DOI：
10.1142/7257
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发表时间：
2010-11
期刊：
影响因子：
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通讯作者：
M. Schröter;A. Chakravorty
中科院分区：
文献类型：
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作者：
M. Schröter;A. Chakravorty
“CompactHierarchicalBiopolarTransistorModelingwithXNUUM”将对工艺开发、建模和电路设计领域的专业人士有很大的实际益处，他们对双极晶体管的应用感兴趣，包括采用现有尖端工艺技术制造的SiGe：C HBT。本书首先概述了现代双极型晶体管的不同器件设计，沿着介绍了它们的相关工作条件;而随后的晶体管理论章节则细分为对大多数经典理论的回顾，并将其纳入现代技术的背景，以及理解现代器件设计所需的先进理论章节。本书旨在为理解现代紧凑型车型提供坚实的基础。
"Compact Hierarchical Bipolar Transistor Modeling with HICUM" will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. This book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.