Truly Electroforming‐Free Memristor Based on TiO2‐CoO Phase‐Separated Oxides with Extremely High Uniformity and Low Power Consumption
Truly Electroforming‐Free Memristor Based on TiO2‐CoO Phase‐Separated Oxides with Extremely High Uniformity and Low Power Consumption
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DOI：
10.1002/adfm.202007101
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发表时间：
2020-09
影响因子：
19
通讯作者：
Fuxing Wan;Qianwen Wang;T. Harumoto;T. Gao;K. Ando;Yoshio Nakamura;Ji Shi
中科院分区：
文献类型：
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作者：
Fuxing Wan;Qianwen Wang;T. Harumoto;T. Gao;K. Ando;Yoshio Nakamura;Ji Shi
基于氧化物的忆阻器器件作为下一代非易失性存储器和神经形态计算的最有前途的技术之一正在被广泛研究。然而，依赖于导电丝的形成和断裂的此类器件的开关过程不容易控制，并且因此在电阻开关中引起大的周期到周期和器件到器件的变化，这阻碍了高性能忆阻器的发展。满足真正无电铸、高度均匀和低功率开关要求的高性能忆阻器尚未开发。在这里，相分离的氧化物忆阻器基于自发相分离过程来证明，以形成分布在结晶CoO晶粒之间的非晶TiO2开关介质。将导电细丝限制在晶粒间非晶氧化物相中有效地最小化了细丝形成和断裂的随机性，从而大大增强了开关均匀性。所设计的微结构还有助于开关过程中细丝的形成和溶解，实现真正的无电铸开关和低开关功率（同时低开关电压0.4 V和低电流2.5 µA）。
Oxide‐based memristor devices are being extensively studied as one of the most promising technologies for next generation nonvolatile memory and neuromorphic computing. However, the switching process of such devices relying on the formation and rupture of conductive filaments has not been easily controlled, and thus induces large cycle‐to‐cycle and device‐to‐device variations in resistive switching, which hinders the development of high‐performance memristors. High‐performance memristors that meet the requirements for truly electroforming‐free, highly uniform, and low‐power switching are yet to be developed. Here, a phase‐separated oxide memristor is demonstrated based on a spontaneous phase separation process to form amorphous TiO2 switching medium distributed among the crystalline CoO grains. The confinement of conductive filaments into the intergrain amorphous oxide phase effectively minimizes the stochasticity of filament formation and rupture, resulting in drastically enhanced switching uniformity. The designed microstructure also facilitates filament formation and dissolution during switching processes and leads to truly electroforming‐free switching and low switching power (simultaneous low switching voltage 0.4 V and low current 2.5 µA).