In-situ TEM observation of transformation of dislocations from shuffle to glide sets in Si under supersaturation of interstitials
In-situ TEM observation of transformation of dislocations from shuffle to glide sets in Si under supersaturation of interstitials
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DOI：
10.1080/14786430600764898
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发表时间：
2006-10
影响因子：
1.6
通讯作者：
H. Saka;K. Yamamoto;S. Arai;K. Kuroda
中科院分区：
文献类型：
--
作者：
H. Saka;K. Yamamoto;S. Arai;K. Kuroda
在室温下，通过压痕将洗牌组的位错引入到单晶中。利用聚焦离子束(FIB)装置制作了用于透射电子显微镜(TEM)观察的铝箔样品。在透射电子显微镜中，将铝箔样品在室温至800℃的温度范围内加热。在400℃左右，位错的混洗集转变为滑动位错集。在更高的温度下，滑移集中的螺型位错转变为螺旋位错。对比实验和体视显微镜观察表明，螺位错与间隙发生了相互作用。这些间隙必须是在FIB制作透射电子显微镜样品时或在较低温度下的透射电子显微镜观察过程中引入的。
Dislocations of the shuffle set were introduced into an Si single crystal by indentation at room temperature. Foil specimens for transmission electron microscope (TEM) observation were fabricated using a focused ion beam (FIB) apparatus. The foil specimens were heated in the temperature range between room temperature and 800°C in the TEM. The shuffle set of dislocations were transformed into a glide set of dislocations at around 400°C. At higher temperatures, screw dislocations in the glide set were transformed into helices. Contrast experiment and stereomicroscopy revealed that the screw dislocation interacted with interstitials. These interstitials must have been introduced during either FIB fabrication of the TEM specimens or during TEM observation at lower temperatures.