Selective-area growth and transport properties of MnAs/InAs heterojunction nanowires
Selective-area growth and transport properties of MnAs/InAs heterojunction nanowires
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DOI：
10.1557/jmr.2019.333
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发表时间：
2019-11
影响因子：
2.7
通讯作者：
S. Hara;M. T. Elm;P. Klar
中科院分区：
文献类型：
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作者：
S. Hara;M. T. Elm;P. Klar
作者总结了垂直 MnAs/InAs 异质结纳米线 (NW) 阵列的选择性区域生长结果，并初步表征了单个 MnAs/InAs 异质结纳米线和单个 InAs 主体纳米线对于 MnAs 夹杂物的传输特性。在部分SiO_2掩蔽的GaAs(111)B衬底上选择性区域生长主体InAs纳米线(NWs)后，在MnAs内延过程中，形成了在室温下表现出自发磁化的六方NiAs型MnAs纳米团簇(NCs)，其<0001>方向平行于闪锌矿型InAs主体的<111>B方向。西北地区。对于 InAs 主体纳米线，在 7 至 280 K 的温度下观察到高达 165% 的大正普通磁阻 (MR) 效应。此外，磁输运测量揭示了普遍的电导波动和在高达 20 K 的温度下由于表面形成的电荷积累层而导致的弱安德森局域化。然而，单MnAs/InAs异质结纳米线仅表现出负MR效应，该效应与温度T < 10 K无关，并且在10 T时随着磁场的增加线性降低至-10%。这些结果揭示了铁磁NCs对InAs主体NWs内部输运行为的巨大影响。
The authors summarize the results of selective-area growth of vertical MnAs/InAs heterojunction nanowire (NW) arrays and present a preliminary characterization of the transport properties of a single MnAs/InAs heterojunction NW and a single InAs host NW for MnAs inclusions. During the endotaxy of MnAs after the selective-area growth of host InAs nanowires (NWs) on partially SiO_2-masked GaAs(111)B substrates, hexagonal NiAs-type MnAs nanoclusters (NCs), which exhibit spontaneous magnetization at room temperature, are formed with the 〈0001〉 direction oriented parallel to the 〈111〉B direction of the zinc-blende-type InAs host NWs. For InAs host NWs, a large positive ordinary magnetoresistance (MR) effect up to 165% is observed at temperatures between 7 and 280 K. In addition, magnetotransport measurements reveal universal conductance fluctuations and a weak Anderson localization at temperatures up to 20 K due to a charge-accumulation layer formed at the surface. Single MnAs/InAs heterojunction NWs, however, exhibit only a negative MR effect, which is independent of temperature T < 10 K and linearly decreases up to −10% at 10 T with increasing magnetic field. These results reveal the tremendous influence of ferromagnetic NCs on the transport behavior inside the InAs host NWs.