Leakage current analysis of diamond Schottky barrier diodes operated at high temperature
Leakage current analysis of diamond Schottky barrier diodes operated at high temperature
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DOI：
10.7567/jjap.53.04ep04
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发表时间：
2007-02
影响因子：
1.5
通讯作者：
H. Umezawa;Takeyasu Saito;N. Tokuda;M. Ogura;S. Ri;H. Yoshikawa;S. Shikata
中科院分区：
文献类型：
--
作者：
H. Umezawa;Takeyasu Saito;N. Tokuda;M. Ogura;S. Ri;H. Yoshikawa;S. Shikata
金刚石是一种很有前景的材料，可用于在高温条件下运行的高功率半导体器件。使用优质金刚石制造的肖特基势垒二极管（SBD）在室温下 1.5 MV/cm 的反向电场中表现出小于 10−7 A/cm2 的低反向漏电流。即使在 415 K 的高温下，这种金刚石 SBD 的漏电流也很低。由于势垒高度较大，这种金刚石 SBD 的漏电流比 SiC SBD 低 2-4 个数量级。使用热电子场发射模型对金刚石 SBD 的泄漏特性进行了建模，这与实验结果非常吻合。
Diamond is a promising material for use in high-power semiconductor devices that are operated under high-temperature conditions. A Schottky barrier diode (SBD) fabricated by using high-quality diamond shows a low reverse leakage current of less than 10−7 A/cm2 in a reverse electrical field of 1.5 MV/cm at room temperature. The leakage current of this diamond SBD is found to be low even at an elevated temperature of 415 K. The leakage current of this diamond SBD is 2–4 orders of magnitude lower than that of a SiC SBD owing to the larger barrier height. The leakage characteristics of the diamond SBD are modeled using the thermionic-field emission model, which well agrees with experimental results.