The effects of deposition rate and substrate temperature of ITO thin films on electrical and optical properties
The effects of deposition rate and substrate temperature of ITO thin films on electrical and optical properties
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DOI：
10.1016/s0040-6090(98)00371-x
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发表时间：
1998-07-01
期刊：
影响因子：
2.1
通讯作者：
Salehi, A
中科院分区：
文献类型：
--
作者：
Salehi, A
使用热沉积技术沉积氧化铟锡 (ITO) 薄膜，无需将氧气引入腔室。已经发现，沉积速率而不是基底温度是控制ITO薄膜透射率的主导因素。在0.2埃/秒的沉积速率下，获得了在光谱可见光区域超过80％的透射率值和9.1×10(-4)欧姆·厘米的电阻率。 SEM、XRD 和 RES 技术已被用来识别不同条件下沉积的 ITO 层的结构和成分变化。 (C) 1998 Elsevier Science S.A. 保留所有权利。
Indium Tin Oxide (ITO) films have been deposited using a thermal deposition technique without introduction of oxygen into the chamber. It has been found that the deposition rate, rather than the substrate temperature, is the dominant factor in controlling the transmittance of the ITO films. A transmittance value of more than 80% in the visible region of the spectrum and a resistivity of 9.1 X 10(-4) Ohm cm has been obtained with a deposition rate of 0.2 Angstrom/s. SEM, XRD and RES techniques have been used in order to identify the structure and composition changes of the ITO layers deposited at different conditions. (C) 1998 Elsevier Science S.A. All rights reserved.