Enhanced fluorescence from semiconductor quantum dot-labelled cells excited at 280 nm.
Enhanced fluorescence from semiconductor quantum dot-labelled cells excited at 280 nm.
复制标题
半导体量子点标记细胞在 280 nm 处激发的增强荧光。
DOI：
10.1088/2050-6120/ac5878
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发表时间：
2022
影响因子：
3.2
通讯作者：
McFarlane M
中科院分区：
文献类型：
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作者：
McFarlane M
与荧光显微镜中使用的更传统的荧光团相比，半导体量子点 (QD) 具有显着优势，包括减少光漂白、长期光稳定性和高量子产率，但由于光源和光学器件的限制，其在深紫外光中的激发波长往往远离其最佳激发波长。在这里，我们对细胞环境中半导体量子点在 280 nm 波长下的激发与较长波长 365 nm 下的激发进行了定量比较。我们报告称，与 365 nm 激发相比，在多个数据集上使用 280 nm 激发进行细胞成像时，荧光强度有所增加，图像质量也有所提高，最高平均荧光强度增加了 3.59 倍。我们还发现与 280 nm 激发相关的 QD 没有明显的光漂白，并且发现平均约 80% 的细胞可以耐受 6 小时内暴露于高强度 280 nm 照射。
Semiconductor quantum dots (QDs) have significant advantages over more traditional fluorophores used in fluorescence microscopy including reduced photobleaching, long-term photostability and high quantum yields, but due to limitations in light sources and optics, are often excited far from their optimum excitation wavelengths in the deep-UV. Here, we present a quantitative comparison of the excitation of semiconductor QDs at a wavelength of 280 nm, compared to the longer wavelength of 365 nm, within a cellular environment. We report increased fluorescence intensity and enhanced image quality when using 280 nm excitation compared to 365 nm excitation for cell imaging across multiple datasets, with a highest average fluorescence intensity increase of 3.59-fold. We also find no significant photobleaching of QDs associated with 280 nm excitation and find that on average,∼ 80% of cells can tolerate exposure to high-intensity 280 nm irradiation over a 6-hour period.