Effect of annealing on dielectric behavior and electrical conduction of W6+ doped Bi3TiNbO9 ceramics
Effect of annealing on dielectric behavior and electrical conduction of W6+ doped Bi3TiNbO9 ceramics
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DOI：
10.1063/1.2740189
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发表时间：
2007-05
影响因子：
4
通讯作者：
Zhiyong Zhou;Yuchen Li;Lihui Yang;Xianlin Dong;Haixue Yan
中科院分区：
文献类型：
--
作者：
Zhiyong Zhou;Yuchen Li;Lihui Yang;Xianlin Dong;Haixue Yan
采用固相反应法制备了Bi3Ti1 − xWxNbO9 + δ（x = 0.15）（WBTN-15）陶瓷，并通过在O2和Ar气氛中退火，对陶瓷样品中氧空位的行为进行了确认和研究。介电测量结果表明，氧空位对Ar退火样品的介电损耗和介电常数有很大的贡献，与烧结和O2退火样品相比。直流电导率测量表明，氧空位主要在较低温度下起重要作用。WBTN-15陶瓷在高温区表现为本征导电机制，在低温区表现为电子和氧空位离子混合导电机制。
Bi3Ti1−xWxNbO9+δ (x=0.15) (WBTN-15) ceramics were prepared using the solid state reaction method, and the behaviors of oxygen vacancies were confirmed and investigated by annealing the ceramic samples in O2 and Ar gas atmospheres. Dielectric measurements showed that oxygen vacancies had great contributions to the dielectric loss and constant of Ar-annealed sample, compared with those of as-sintered and O2-annealed samples. dc conductivity measurements indicate that oxygen vacancies played an important role mainly at lower temperature. The WBTN-15 ceramics exhibit intrinsic conduction mechanism at high temperature range and electronic and oxygen-vacancy ionic mixed conduction mechanism at low temperature range.