Operando dynamics of trapped carriers in perovskite solar cells observed via infrared optical activation spectroscopy.
Operando dynamics of trapped carriers in perovskite solar cells observed via infrared optical activation spectroscopy.
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通过红外光学激活光谱观察到的钙钛矿太阳能电池中的载流子的操作动力学。
DOI:
10.1038/s41467-023-43852-5
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发表时间:
2023-12-04
影响因子:
16.6
通讯作者:
Bakulin, Artem A.
中科院分区:
文献类型:
--
作者:
Pan, Jiaxin;Chen, Ziming;Zhang, Tiankai;Hu, Beier;Ning, Haoqing;Meng, Zhu;Su, Ziyu;Nodari, Davide;Xu, Weidong;Min, Ganghong;Chen, Mengyun;Liu, Xianjie;Gasparini, Nicola;Haque, Saif A.;Barnes, Piers R. F.;Gao, Feng;Bakulin, Artem A.
Conventional spectroscopies are not sufficiently selective to comprehensively understand the behaviour of trapped carriers in perovskite solar cells, particularly under their working conditions. Here we use infrared optical activation spectroscopy (i.e., pump-push-photocurrent), to observe the properties and real-time dynamics of trapped carriers within operando perovskite solar cells. We compare behaviour differences of trapped holes in pristine and surface-passivated FA0.99Cs0.01PbI3 devices using a combination of quasi-steady-state and nanosecond time-resolved pump-push-photocurrent, as well as kinetic and drift-diffusion models. We find a two-step trap-filling process: the rapid filling (~10 ns) of low-density traps in the bulk of perovskite, followed by the slower filling (~100 ns) of high-density traps at the perovskite/hole transport material interface. Surface passivation by n-octylammonium iodide dramatically reduces the number of trap states (~50 times), improving the device performance substantially. Moreover, the activation energy (~280 meV) of the dominant hole traps remains similar with and without surface passivation. Conventional spectroscopic techniques are not sufficiently selective to follow the dynamics of trapped carriers in working perovskite solar cells. Here, authors use infrared optical activation spectroscopy to observe real time evolution of trapped carriers and compare the behaviour of trapped holes.
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影响因子:
5.9
作者:
El-Zohry, Ahmed M.;Turedi, Bekir;Alsalloum, Abdullah;Maity, Partha;Bakr, Osman M.;Ooi, Boon S.;Mohammed, Omar F.
通讯作者:
Mohammed, Omar F.
影响因子:
56.7
作者:
Guo, Renjun;Han, Dan;Muller-Buschbaum, Peter
通讯作者:
Muller-Buschbaum, Peter
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5.8
作者:
Chen Z;Liu M;Li Z;Shi T;Yang Y;Yip HL;Cao Y
通讯作者:
Cao Y
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7.9
作者:
Chen, Sheng;Wen, Xiaoming;Ho-Baillie, Anita
通讯作者:
Ho-Baillie, Anita
影响因子:
17.1
作者:
Bakulin, Artem A.;Neutzner, Stefanie;Chen, Zhuoying
通讯作者:
Chen, Zhuoying