Gate control of interlayer exchange coupling in ferromagnetic semiconductor trilayers with perpendicular magnetic anisotropy
Gate control of interlayer exchange coupling in ferromagnetic semiconductor trilayers with perpendicular magnetic anisotropy
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DOI：
10.1063/5.0079245
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发表时间：
2022-04
期刊：
影响因子：
6.1
通讯作者：
Phunvira Chongthanaphisut;Kyung Jae Lee;Sanghoon Lee;X. Liu;M. Dobrowolska;J. Furdyna
中科院分区：
文献类型：
--
作者：
Phunvira Chongthanaphisut;Kyung Jae Lee;Sanghoon Lee;X. Liu;M. Dobrowolska;J. Furdyna
磁性多层膜的层间交换耦合（IEC）由于其在磁存储和逻辑器件中的潜在应用而受到广泛关注。虽然可以通过调整结构参数在金属铁磁多层膜系统中可靠地获得IEC，但是由于金属系统中的大载流子密度，难以实现IEC的门控。在这里，我们证明，IEC可以可靠地控制在铁磁半导体（FMS）三层结构的外部栅极电压的装置。我们表明，通过设计一个量子阱型三层结构的基础上（Ga，Mn）（As，P）FMS和适应的离子液体门控技术，载流子密度的系统的隔离层中可以调制的栅极电压只有几伏。由于这种能力，我们能够在FMS三层中改变IEC的强度高达49%。这些结果提供了重要的见解自旋电子器件的设计和它们的节能操作。
Interlayer exchange coupling (IEC) has been intensively investigated in magnetic multilayers, owing to its potential for magnetic memory and logic device applications. Although IEC can be reliably obtained in metallic ferromagnetic multilayer systems by adjusting structural parameters, it is difficult to achieve gate control of IEC in metallic systems due to their large carrier densities. Here, we demonstrate that IEC can be reliably controlled in ferromagnetic semiconductor (FMS) trilayer structures by means of an external gate voltage. We show that, by designing a quantum-well-type trilayer structure based on (Ga,Mn)(As,P) FMSs and adapting the ionic liquid gating technique, the carrier density in the nonmagnetic spacer of the system can be modulated with gate voltages of only a few volts. Due to this capability, we are able to vary the strength of IEC by as much as 49% in the FMS trilayer. These results provide important insights into design of spintronic devices and their energy-efficient operation.