New Resonant Gate Driver Circuit for High-Frequency Application of Silicon Carbide MOSFETs
New Resonant Gate Driver Circuit for High-Frequency Application of Silicon Carbide MOSFETs
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DOI：
10.1109/tie.2017.2677307
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发表时间：
2017-03
影响因子：
7.7
通讯作者：
Jaya Venkata Phani Sekhar Chennu;R. Maheshwari;Helong Li
中科院分区：
文献类型：
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作者：
Jaya Venkata Phani Sekhar Chennu;R. Maheshwari;Helong Li
碳化硅（SiC）和氮化镓金属氧化物半导体场效应晶体管（MOSFET）能够在高开关频率下处理高功率，具有更少的开关损耗和传导损耗。栅极驱动电路的功耗与开关频率成正比。从栅极电源获取的功率在常规栅极驱动器（CGD）电路的栅极电阻中耗散。代替耗散所有栅极驱动器能量，可以通过利用谐振原理来回收或再循环一些能量。这减少了从栅极电源获取的净功率。本文提出了一种新的谐振栅极驱动器（RGD）电路，在高开关频率下与CGD电路相比功耗更低。所提出的栅极驱动器是为SiC MOSFET设计的。它可以适当修改，以适应绝缘栅双极晶体管和其他MOSFET也。在LTSpice环境中对所提出的电路进行了性能仿真，并开发了一个实验原型来验证其性能。与CGD电路相比，所提出的RGD电路在栅极驱动器功耗方面实现了近50%的降低。
Silicon carbide (SiC) and gallium nitride metal–oxide–semiconductor field-effect transistors (MOSFETs) are capable of processing high power at high switching frequencies with less switching losses and conduction losses. The gate driver circuit power consumption is directly proportional to the switching frequency. The power taken from the gate supply is dissipated in the gate resistance of the conventional gate driver (CGD) circuit. Instead of dissipating all the gate driver energy, some energy can be recovered or recycled by utilizing the principle of resonance. This reduces the net power being taken from the gate supply. This paper presents a new resonant gate driver (RGD) circuit which consumes less power compared to the CGD circuit at high switching frequencies. The proposed gate driver is designed for SiC MOSFETs. It can be modified appropriately to suit for insulated-gate bipolar transistors and other MOSFETs also. The performance of the proposed circuit is simulated in LTSpice environment, and an experimental prototype of the proposed circuit is developed to validate its performance. The proposed RGD circuit has achieved nearly 50% reduction in gate driver power consumption compared to the CGD circuit.