Hydrogen Plasma Etching Technique for Mono-and Multi-crystalline Silicon Wafers
Hydrogen Plasma Etching Technique for Mono-and Multi-crystalline Silicon Wafers
复制标题
单、多晶硅片氢等离子体刻蚀技术
DOI：
10.1109/wcpec.2006.279712
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
K. Kamisako
中科院分区：
文献类型：
--
作者：
M. Dhamrin;N. H. Ghazali;M. Jeon;T. Saitoh;K. Kamisako
提出了一种新的晶体硅片腐蚀技术。蚀刻技术使用氢远程等离子体提供的氢自由基在室温下与0.2-0.5托的气体压力和氢气流量为160-180 sccm的5-60分钟。扫描电子显微镜（SEM）图像被用来调查蚀刻过程后的表面形貌。此外，测量蚀刻样品的表面反射率以估计蚀刻样品的光学性质。在500-900 nm波长范围内，表面反射率低于2%，具有良好的光学性能。此外，该技术被应用到化学织构化的晶体硅晶片，以研究进一步改善已经织构化的表面的技术能力。结果表明，氢等离子体刻蚀技术是非常有效的，以降低表面的反射特性与碱性溶液的纹理。此外，还研究了将该技术应用于多晶硅片的可能性。初步结果表明，与用170 sccm和180 sccm的氢流量蚀刻的样品相比，表面反射率略有降低
A new etching technique for crystalline silicon wafers is developed. The etching technique uses hydrogen radicals supplied by hydrogen remote plasma at room temperature with gas pressures of 0.2-0.5 Torr and hydrogen flow rates of 160-180 sccm for 5-60 min. Scanning electron microscope (SEM) images are used to investigate the surface morphology after etching process. Furthermore, the surface reflectances of the etched samples are measured to estimate the optical properties of the etched samples. An excellent optical properties of the etched surfaces are found where low surface reflectance below 2% are realized at the wavelength regions between 500-900 nm. In addition, the technique is applied to chemically textured crystalline silicon wafers to investigate the technique ability of further improving the already textured surfaces. The results show that hydrogen plasma etching technique is very effective to reduce the surface reflectance properties of surfaces textured with alkaline solutions. Furthermore, possibility of applying this technique to multicrystalline silicon wafers has been investigated. The primary results show a small reduction in surface reflectance as for samples etched with hydrogen flow rates of 170 sccm and 180 sccm