Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor
Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor
复制标题
通过机械单轴应力增强 4H-SiC (0001) 横向金属氧化物半导体场效应晶体管的迁移率
DOI：
10.35848/1347-4065/ab6d85
复制
发表时间：
2020
影响因子：
1.5
通讯作者：
O. Nakatsuka
中科院分区：
文献类型：
--
作者：
W. Takeuchi;K. Kutsuki;E. Kagoshima;T. Onishi;S. Iwasaki;M. Sakashita;H. Fujiwara;O. Nakatsuka
我们研究了机械单轴应变对 4H-SiC(0001) 上横向 n 沟道金属氧化物半导体场效应晶体管 (MOSFET) 反转沟道迁移率的影响。在 MOSFET 制造后，我们使用定制设计的弯曲支架对芯片施加拉应力和压应力。在弯曲方向 11 2 0 和 1 1 00 上研究了两个不同沟道方向 11 2 0 和 1 1 00 的迁移率行为以及拉应力和压应力。我们发现，随着垂直配置的单轴压应力（即垂直于弯曲方向的漏极电流流动），反型沟道迁移率有效地增加。根据迁移率的温度依赖性，我们推断迁移率的增强归因于引入应力导致 4H-SiC 中有效质量的减少。
We investigated the impact of the mechanical uniaxial strain on the inversion channel mobility of lateral n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on 4H-SiC(0001). We used custom-designed bend-holders to apply a tensile and compressive stress to the chip after MOSFET fabrication. The behavior of mobility with the two different channel directions 11 2 ¯ 0 and 1 1 ¯ 00 was investigated on the bend directions 11 2 ¯ 0 and 1 1 ¯ 00 with the tensile and compressive stress. We found that the inversion channel mobility effectively increases with the uniaxial compressive stress of the perpendicular configuration which is the drain current flow perpendicular to the bend direction. From the temperature dependence of mobility, we deduced that the enhancement of mobility is attributed to the reduction of the effective mass in 4H-SiC by introduced stress.
影响因子：
3.2
作者：
S. Takagi;J. Hoyt;J. Welser;J. Gibbons
通讯作者：
S. Takagi;J. Hoyt;J. Welser;J. Gibbons