High-temperature scintillation properties of orthorhombic Gd2Si2O7 aiming at well logging

High-temperature scintillation properties of orthorhombic Gd2Si2O7 aiming at well logging
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正交晶系Gd2Si2O7测井高温闪烁特性

DOI:
10.7567/apex.8.062602
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发表时间:
2015
影响因子:
2.3
通讯作者:
H. Ishibashi
H. Ishibashi
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Youichi Tsubota;J. Kaneko;M. Higuchi;S. Nishiyama;H. Ishibashi

文献摘要

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研究了正交Gd2Si2O7:Ce (GPS:Ce)单晶闪烁体在室温至573 K范围内的闪烁和发光特性。采用顶种溶液生长法(TSSG)生长正交晶型GPS晶体。正交GPS在RT下的闪烁光产率是Gd2SiO5:Ce (GSO)的2.9倍。在RT - 523 K温度范围内,正交GPS的光产率值(Ce = 2.5%)几乎没有变化,而在523 K温度下,GSO的光产率是RT温度下GSO的两倍以上。这些GPS闪烁体有望为更深层的石油勘探做出贡献。
Scintillation and luminescence properties of orthorhombic Gd2Si2O7:Ce (GPS:Ce) single-crystal scintillators were investigated for temperatures ranging from room temperature (RT) to 573 K. Orthorhombic GPS crystals were grown by using a top-seeded solution growth (TSSG) method. The scintillation light yield of the orthorhombic GPS at RT was ∼2.9 times higher than that of Gd2SiO5:Ce (GSO). The light yield values of the orthorhombic GPS (Ce = 2.5%) were almost unchanged for temperatures ranging from RT to 523 K, and at 523 K, were higher than twice the light yield of GSO at RT. These GPS scintillators are expected to contribute to oil exploration at greater depths.