Interaction between a Vacancy and an Si, Ge or Sn Atom in Al–10wt%Zn Alloys
Interaction between a Vacancy and an Si, Ge or Sn Atom in Al–10wt%Zn Alloys
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Al-10wt%Zn 合金中空位与 Si、Ge 或 Sn 原子之间的相互作用
DOI：
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发表时间：
1964
期刊：
影响因子：
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通讯作者：
F. Hashimoto
中科院分区：
文献类型：
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作者：
M. Ohta;F. Hashimoto
测量了Al-10wt%Zn-0.10wt%Si，Al-10wt%Zn-0.12wt%Ge和Al-10wt%Zn-0.01wt%Sn三元合金淬火后等温时效过程中电阻率的变化，研究了空位与Si：Ge或Sn原子之间的相互作用。这些合金中的团簇特征与Al-10wt%Zn二元合金中的团簇特征基本相同。因此，结合能可以用三元合金电阻率达到最大值的时间t M t与二元合金电阻率达到最大值的时间t M B之比来计算。空位与Si、Ge和Sn原子的结合能分别为B 1 + 0.10、B 1 + 0.15和B 1 + 0.25 eV，其中B 1为空位与Zn原子的结合能。
The changes of resistivity during isothermal aging after quenching were measured in Al–10wt%Zn–0.10wt%Si, Al–10wt%Zn–0.12wt%Ge and Al–10wt%Zn–0.01wt%Sn ternary alloys and the interactions between a vacancy and an Si: Ge or Sn atom were studied. General features of clustering in these alloys were not different from those in Al–10wt%Zn binary alloy. Therefore, the binding energy could be obtained by taking ratio of time, t M t , to reach the maximum of resistivity in ternary alloys with that time, t M b , in binary alloy. Binding energies between a vacancy and an Si, Ge or Sn atom were deduced to be about B 1 +0.10, B 1 +0.15 and B 1 +0.25 eV, respectively, where B 1 is binding energy between a vacancy and a Zn atom.