A Wideband Low RMS Phase/Gain Error mm-Wave Phase Shifter in 22-nm CMOS FDSOI
A Wideband Low RMS Phase/Gain Error mm-Wave Phase Shifter in 22-nm CMOS FDSOI
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DOI：
10.1109/lmwt.2023.3245987
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发表时间：
2023-02-28
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通讯作者：
Entesari, Kamran
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文献类型：
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作者：
Bardeh, Mohammad Ghaedi;Fu, Jierui;Entesari, Kamran
具有低均方根相位/增益误差的 5 位低功耗紧凑型有源毫米波移相器 (PS) 采用 22 nm CMOS 全耗尽绝缘体硅 (FDSOI) 技术实现，适用于 5G 多输入多输出 (MIMO) 相控阵。所提出的移相器使用增益增强的两级 RC 多相滤波器 (PPF)，在补偿增益响应的同时保持合理的相位精度特性。该系统采用电抗不变的共源共栅矢量调制器（VM），为正交网络带来恒定的负载效应，从而改善均方根相位/增益误差。移相器显示测得的 rms 相位误差 < 4? 24-36 GHz。 24-36 GHz 时测得的平均增益为 -8.2 至 -5 dB，24-36 GHz 时均方根增益误差 < 0.6 dB。所提出的移相器的总功耗为7.2 mW，芯片面积为612 x 953 μm（包括焊盘）。
A 5-bit low-power and compact active mm-wave phase shifter (PS) with low rms phase/gain error is implemented in 22-nm CMOS fully depleted silicon on insulator (FDSOI) technology for 5G multi-input multi-output (MIMO) phased arrays. The proposed phase shifter uses a gain-boosted two-stage RC poly-phase filter (PPF), which maintains reasonable phase accuracy features while compensating for the gain response. The system uses a reactance invariant cascode vector modulator (VM), which results in constant loading effect for quadrature network, therefore improving rms phase/gain error. The phase shifter shows measured rms phase error of < 4? at 24-36 GHz. The measured mean gain is from -8.2 to -5 dB at 24-36 GHz, and the rms gain error is < 0.6 dB at 24-36 GHz. The total power consumption of the proposed phase shifter is 7.2 mW, and the chip area is 612 x 953 mu m including pads.