Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
复制标题
InP 衬底上分子束外延生长的门控 InGaAs 脊量子线中高达 50 K 的库仑阻塞型电导振荡的观察
DOI：
10.1143/jjap.36.1672
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发表时间：
1997
影响因子：
1.5
通讯作者：
H. Hasegawa
中科院分区：
文献类型：
--
作者：
H. Okada;H. Fujikura;T. Hashizume;H. Hasegawa
在InP图像化（001）衬底上通过选择性分子束外延（MBE）生长的InAlAs/InGaAs脊状量子线（QWR）晶体管上首次成功制备了基于InP的量子线（QWR）晶体管。每根金属丝均表现出强烈的光致发光、阴极发光和舒布尼科夫-德哈斯振荡。SdH振荡的行为证实了栅极控制的一维输运的存在。在掐断附近，量子水阱晶体管显示出高达50 K的库仑阻塞型电导振荡。库仑间隙的有效值估计为28 mV。讨论了量子点形成的可能机制。
InP-based quantum wire (QWR) transistors were successfully fabricated for the first time directly on InAlAs/InGaAs ridge QWRs grown by selective molecular beam epitaxy (MBE) on patterned (001) InP substrates. Each wire showed strong photoluminescence, cathodoluminescence and Shubnikov-de Haas (SdH) oscillations. The behavior of the SdH oscillations confirmed the presence of gate-controlled one-dimensional transport. Near pinch-off, QWR transistors showed Coulomb blockade type conductance oscillations up to 50 K. The effective value of the Coulomb gap was estimated to be 28 mV. Possible mechanisms for quantum dot formation are discussed.