Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics
Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics
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用于 Ge MOS 器件的二氧化钛/氧化铝双层栅极电介质：频率和温度相关的电气特性
DOI：
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发表时间：
2010
期刊：
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通讯作者：
P. McIntyre
中科院分区：
文献类型：
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作者：
S. Swaminathan;P. McIntyre
研究了Pt/TiO 2 /Al 2 O3/p-Ge金属氧化物半导体（MOS）器件的温度和频率特性。在-40至100°C的测量温度范围内，反型电导是由从衬底本体到沟道的电子扩散控制的，而不是由中能隙态的产生复合控制的。积累电容的分散性随着温度的升高而增加，并且具有与针对从衬底到栅极的电子注入测量的漏电流密度的温度依赖性类似的温度依赖性。这种效应在仅包括单层Al 2 O3作为电介质的电容器中是不存在的。这些结果表明，热辅助捕获/脱陷的载流子在缺陷的TiO 2 /Al 2 O 3双层产生观察到的频率依赖的最大电容密度的色散。
We investigate the temperature- and frequency-dependent electrical behavior of Pt/TiO 2 /Al 2 O 3 /p-Ge metal-oxide-semiconductor (MOS) devices. The conductance in inversion in the measured temperature range from -40 to 100°C is controlled by electron diffusion from the bulk of the substrate to the channel, rather than by generation-recombination at midgap states. The accumulation capacitance dispersion increases with increasing temperature and has a temperature dependence similar to that of the leakage current density measured for the injection of electrons from the substrate into the gate. This effect is absent from capacitors that include only a single layer of Al 2 O 3 as the dielectric. These results suggest that thermally assisted trapping/detrapping of carriers at defects in the TiO 2 /Al 2 O 3 bilayer produces the observed frequency-dependent dispersion of the maximum capacitance density.