Pure and cobalt-doped SnO2(101) films grown by molecular beam epitaxy on Al2O3
Pure and cobalt-doped SnO2(101) films grown by molecular beam epitaxy on Al2O3
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DOI：
10.1016/j.tsf.2005.02.016
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发表时间：
2005-07-22
期刊：
影响因子：
2.1
通讯作者：
Diebold, U
中科院分区：
文献类型：
--
作者：
Batzill, M;Burst, JM;Diebold, U
采用氧等离子体辅助分子束外延技术在r切α-Al 2 O3衬底上生长了纯SnO 2和Co掺杂SnO 2外延薄膜，并用电子衍射、X射线光电子能谱（XPS）和X射线光电子衍射（XPD）对薄膜进行了表征。在热的氧化铝基板（类似于800摄氏度），只有一个亚单层量的斯里吸附，这表明在氧化铝表面上的锡的第一单层的强粘附。在类似于400-600摄氏度的衬底温度下生长的SnO 2薄膜表现出SnO 2（101）[010]平行于Al 2 O3（-1012）[12-10]的外延关系。与SnO 2（101）单晶表面上的测量相比，SnO 2膜的XPD数据中的细微差异与膜中存在高密度的化学计量反相畴界一致。这些平面缺陷被引入到SnO 2膜中，以补偿SnO 2膜和氧化铝衬底之间沿着SnO 2 [-101]方向超过10%的晶格失配。还生长了Co阳离子浓度为5-15%的CoxSn_（1-x）O_2薄膜。XPS表明Co处于2+氧化态，XPD表明锡被Co替代。（c）2005 Elsevier B. V.保留所有权利。
Pure and Co-doped epitaxial SnO2 films grown by oxygen plasma assisted molecular beam epitaxy on r-cut a-alumina substrates were investigated by electron diffraction, X-ray photoelectron spectroscopy (XPS), and X-ray photoelectron diffraction (XPD). On hot alumina substrates (similar to 800 degrees C) only a submonolayer amount of Sri adsorbs, indicating a strong adhesion of the first monolayer of tin on the alumina surface. SnO2 films grown at similar to 400-600 degrees C substrate temperature exhibit a SnO2(101)[010]parallel to Al2O3(-1012)[12-10] epitaxial relationship. Subtle differences in the XPD data of SnO2 films Compared to measurements on SnO2(101) single crystal surfaces are consistent with the presence of a high density of stoichiometric antiphase domain boundaries in the film. These planar defects are introduced in the SnO2 film to compensate for the more than 10% lattice mismatch between the SnO2 films and the alumina substrate along the SnO2[-101] direction. CoxSn1-xO2 films with a Co-cation concentration of 5-15% were also grown. XPS indicates that Co is in a 2+ oxidation state and XPD shows that tin is replaced substitutionally by Co. (c) 2005 Elsevier B.V. All rights reserved.