The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals
The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals
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DOI：
10.1016/s0022-0248(97)00491-0
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发表时间：
1998-03-01
影响因子：
1.8
通讯作者：
Shimizu, Y
中科院分区：
文献类型：
--
作者：
Machida, N;Suzuki, Y;Shimizu, Y
通过晶体生长实验，研究了氩气流量和炉压对CZ生长硅晶体中氧浓度的影响。本研究采用了一种新设计的气体控制器。氧浓度随氩气流量的增加或炉压的降低而增加，这是首次得到证实。根据计算的氩气沿气体控制器在硅熔体表面的流动速度，分析了氧浓度变化的结果。氩气流速和炉膛压力对氩气流速均有影响。在一定的炉压下，氩气流速随氩气流速的增大而增大，氩气流速随炉压的减小而减小。CZ硅晶体中的氧浓度与氩气的流速成正比。两种可能的机制。可以解释这种关系的讨论。(C) 1998 Elsevier Science B.V.版权所有
The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski (CZ) grown silicon crystals were examined through experimental crystal growth. A newly designed gas controller was used for this study. Increase in the oxygen concentration with an increase in argon gas flow rate or with a decrease in furnace pressure was demonstrated for the first time. The results of oxygen concentration changes were analyzed in terms of calculated velocity of argon gas flow along the gas controller over the silicon melt surface. The flow velocity of argon gas was affected both by the argon gas how rate and the furnace pressure. The flow velocity of argon gas was found to increase with an increase in argon gas flow rate under a fixed furnace pressure or with a decrease in furnace pressure under a fixed argon gas flow rate. The oxygen concentration in the CZ silicon crystals was found to be proportional to the flow velocity of argon gas. Two possible mechanisms which. could explain this relationship were discussed. (C) 1998 Elsevier Science B.V. All rights reserved.