Tunneling density of states in multilayer graphene deposited on a superconductor
Tunneling density of states in multilayer graphene deposited on a superconductor
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沉积在超导体上的多层石墨烯的隧道态密度
DOI：
10.1143/jpsj.79.124706
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
Y. Takane
中科院分区：
文献类型：
--
作者：
F. NUGROHO;T. UEKI;R. ANUGRAHA;Y. HIDAKA;S. KAI;Y. Takane
在有效质量近似下，在 Bogoliubov-de Gennes 方程的框架内研究了沉积在超导体上的多层石墨烯中的准粒子的激发光谱。假设只有底层石墨烯与超导体直接耦合，并且这种耦合由简单的隧道模型描述，我们近似确定N层石墨烯的激发谱并获得顶层的低能隧道态密度。结果表明，当N≥3时，由于邻近效应，隧道态密度出现多能隙结构。
The excitation spectrum of quasiparticles in multilayer graphene deposited on a superconductor is studied within the framework of the Bogoliubov–de Gennes equation under an effective mass approximation. Assuming that only the bottom layer of graphene is directly coupled with the superconductor and this coupling is described by a simple tunneling model, we approximately determine the excitation spectrum ofN-layer graphene and obtain the low-energy tunneling density of states in the top layer. It is shown that due to proximity effect, a multigap structure appears in the tunneling density of states whenN≥3.