Conductance of Al Nanocontacts under High Biases
Conductance of Al Nanocontacts under High Biases
复制标题
高偏置下铝纳米触点的电导
DOI：
10.1143/jjap.42.4680
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
A. Sakai
中科院分区：
文献类型：
--
作者：
Jun;A. Fujii;S. Kurokawa;A. Sakai
The bias dependence of the conductance in Al nanocontacts has been measured at room temperature in ultrahigh vacuum. The conductance histogram of Al nanocontacts shows a well-defined first peak near 0.9G0 (G0=2e2/h is the conductance quantum unit), which corresponds to single-atom contacts of Al. With increasing the bias, this first peak decreases in height and disappears at 800 mV, while its position remains unshifted. The observed disappearance voltage at which the first peak of Al is less than half of that of the 1G0 peak of Au. Our results suggest that under high biases, the formation of Al single-atom contacts become less favorable than that of Au single-atom contacts.
