New Fluorinated Resins for 157 nm Lithography Application
New Fluorinated Resins for 157 nm Lithography Application
复制标题
用于 157 nm 光刻应用的新型氟化树脂
DOI：
10.2494/photopolymer.16.581
复制
发表时间：
2003
期刊：
影响因子：
--
通讯作者：
Chun
中科院分区：
文献类型：
--
作者：
F. Houlihan;Andrew R. Romano;David Rentkiewicz;R. Sakamuri;R. Dammel;W. Conley;Georgia K. Rich;D. Miller;L. Rhodes;J. McDaniels;Chun
作为我们正在开发的新一代更透明的157 nm抗蚀剂平台的一部分，我们描述了一种比AZ®FXTM 1000P具有更高透明度和对比度的新型抗蚀剂系统。使用一种新的保护基团策略，无论是聚(α-bis(trifluoromethyl)bicyclo[2.2.1]hept-5-ene-2-ethanol))、聚(α)还是更透明的全氟树脂(TfR)都取得了令人鼓舞的结果。这些新型抗蚀剂系统在157 nm处的吸光度低至1μm-1，对比度是AZ®FXTM1000P的两倍(即12倍而不是7倍)，并且在研究的剂量范围内既没有明显的暗侵蚀，也没有切换到负色调行为。研究发现，对于多晶硅，TFR平台的抗干法腐蚀性能优于标准DUV抗蚀剂，但对于氧化物腐蚀，其抗干性略低于标准DUV抗蚀剂。小到50 nm线和间距的特征被解析为稍微放松的间距(1：1.5微米)。通过调整基准电平，有可能将光速提高10倍以上，同时仍保持70纳米的分辨率L/S特征。
As part of a new generation of more transparent 157 nm resist platforms we are developing, a novel resist system is described that has higher transparency and contrast than AZ®FXTM 1000P. Using a new protecting group strategy, encouraging results have been obtained with both poly(α,α-bis(trifluoromethyl)bicyclo[2.2.1]hept-5-ene-2-ethanol) and a more transparent perfluorinated resin (TFR). These new resist systems show absorbance values as low as 1 μm-1 at 157 nm, have twice the contrast (i.e., 12 instead of 7) of AZ®FXTM 1000P, and have neither significant dark erosion nor do they switch to negative tone behavior within the dose range studied. The dry etch resistance of the TFR platform is found to be superior to a Standard DUV resist for polysilicon but somewhat lower for oxide etches. Features as small as 50 nm lines and spaces were resolved for slightly relaxed pitches (1:1.5 micron). By adjusting the base level it is possible to improve the photospeed by a factor of more than 10 while still maintaining a resolution of 70 nm L/S features.