Study on on-Chip Antenna Design Based on Metamaterial-Inspired and Substrate-Integrated Waveguide Properties for Millimetre-Wave and THz Integrated-Circuit Applications
Study on on-Chip Antenna Design Based on Metamaterial-Inspired and Substrate-Integrated Waveguide Properties for Millimetre-Wave and THz Integrated-Circuit Applications
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DOI：
10.1007/s10762-020-00753-8
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发表时间：
2020-10-26
影响因子：
2.9
通讯作者：
Limiti, Ernesto
中科院分区：
文献类型：
--
作者：
Alibakhshikenari, Mohammad;Virdee, Bal S.;Limiti, Ernesto
本文介绍了一种用于毫米波和太赫兹集成电路片上实现的创新天线的性能参数（例如阻抗带宽、辐射增益和效率）以及抑制衬底损耗的研究结果。这是通过使用超材料和衬底集成波导（SIW）技术实现的。片上天线结构包括五个交替的金属化层和硅层。在顶部金属化层上蚀刻具有超材料启发的十字形槽的圆形辐射贴片阵列，在顶部金属化层下方是硅层，硅层的底表面被金属化以创建接地平面。在下面的硅层中实现的是一个腔体，其上没有接地层。在此硅层下面是用于激励天线的开放式微带馈线。馈电机制是基于从底部硅层到顶部圆形贴片的电磁能量通过腔的耦合。为了抑制表面波并减少衬底损耗，通过在结构的外围实现将顶层连接到接地平面的金属通孔，在顶部硅层处应用SIW概念。所提出的片上天线具有平均测量的辐射增益和效率为6.9 dBi和53%，分别在其工作频率范围从0.285-0.325太赫兹。所提出的片上天线的尺寸为1.35 x 1 x 0.06 mm（3）。该天线在毫米波和太赫兹集成电路中的应用是可行的。
This paper presents the results of a study on improving the performance parameters such as the impedance bandwidth, radiation gain and efficiency, as well as suppressing substrate loss of an innovative antenna for on-chip implementation for millimetre-wave and terahertz integrated-circuits. This was achieved by using the metamaterial and the substrate-integrated waveguide (SIW) technologies. The on-chip antenna structure comprises five alternating layers of metallization and silicon. An array of circular radiation patches with metamaterial-inspired crossed-shaped slots are etched on the top metallization layer below which is a silicon layer whose bottom surface is metalized to create a ground plane. Implemented in the silicon layer below is a cavity above which is no ground plane. Underneath this silicon layer is where an open-ended microstrip feedline is located which is used to excite the antenna. The feed mechanism is based on the coupling of the electromagnetic energy from the bottom silicon layer to the top circular patches through the cavity. To suppress surface waves and reduce substrate loss, the SIW concept is applied at the top silicon layer by implementing the metallic via holes at the periphery of the structure that connect the top layer to the ground plane. The proposed on-chip antenna has an average measured radiation gain and efficiency of 6.9 dBi and 53%, respectively, over its operational frequency range from 0.285-0.325 THz. The proposed on-chip antenna has dimensions of 1.35 x 1 x 0.06 mm(3). The antenna is shown to be viable for applications in millimetre-waves and terahertz integrated-circuits.