Passivation of InP-based HBTs
Passivation of InP-based HBTs
复制标题
DOI：
10.1016/j.apsusc.2006.03.050
复制
发表时间：
2006-08
影响因子：
6.7
通讯作者：
Z. Jin;K. Uchida;S. Nozaki;W. Prost;F. Tegude
中科院分区：
文献类型：
--
作者：
Z. Jin;K. Uchida;S. Nozaki;W. Prost;F. Tegude
本文研究了InP基异质结双极晶体管（HBT）的表面效应、（NH_4）_2S和低温淀积SiNx钝化。InP基HBT的表面复合电流与基区结构有关。InGaAs和InP的（NH 4）2S处理去除了自然氧化层并导致硫键合的表面。这可以产生无表面复合的基于InP的HBT。当HBT暴露于空气中10天时，发现降解。InGaAs/InP异质结双极晶体管的低温氮化硅钝化使基区电流急剧下降，电流增益显著增加。HBT性能的提高主要归因于较低的沉积温度和在初始沉积过程中的N2等离子体处理的效果。氮化硅钝化被发现是稳定的。InGaAs/InP HBT的S/SiNx钝化导致基区电流的减小和电流增益的增加。退火工艺可以使基极电流进一步减小，电流增益增加。
The surface effects, the (NH4)2S and low-temperature-deposited SiNxpassivations of InP-based heterostructure bipolar transistors (HBTs) have been investigated. The surface recombination current of InP-based HBTs is related to the base structures. The (NH4)2S treatment for InGaAs and InP removes the natural oxide layer and results in sulfur-bonded surfaces. This can create surface-recombination-free InP-based HBTs. Degradation is found when the HBTs were exposed to air for 10 days. The low-temperature-deposited SiNxpassivation of InGaAs/InP HBTs causes a drastic decrease in the base current and a significant increase in the current gain. The improvement in the HBT performance is attributed to the low deposition temperature and the effect of N2plasma treatment in the initial deposition process. The SiNxpassivation is found to be stable. S/SiNxpassivation of InGaAs/InP HBTs results in a decrease in the base current and an increase in the current gain. The annealing process can cause the base current to decrease further and the current gain increase.