Electron tunneling study in the NbSe3 charge density wave state.
Electron tunneling study in the NbSe3 charge density wave state.
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DOI：
10.1103/physrevlett.76.676
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发表时间：
1996-01
影响因子：
8.6
通讯作者：
Sorbier;Tortel;Monceau;Lévy
中科院分区：
文献类型：
--
作者：
Sorbier;Tortel;Monceau;Lévy
本文在${\ mathm {NbSe}}_{3}$上进行了低温下费米能级附近态密度的隧穿光谱研究。隧穿电导数据揭示了相对于费米能级和低于4.2 K 2最小值的不对称性。这些结果明确地确立了${\ mathm {NbSe}}_{3}$在低温下的半金属性质。在各向异性隙结构下对隧道谱进行了分析，得到的横向耦合能与能带计算结果吻合较好。
A study using tunneling spectroscopy of the density of states in the vicinity of Fermi level has been performed on ${\mathrm{NbSe}}_{3}$ at low temperature. The tunneling conductance data reveal an asymmetry with respect to the Fermi level and below 4.2 K two minima. These results definitely establish the semimetallic character of ${\mathrm{NbSe}}_{3}$ at low temperature. Tunneling spectra have been analyzed assuming an anisotropic gap structure, and the transverse coupling energy derived is in good agreement with band calculations.