A study of electron interactions with silicon tetrafluoride : elastic scattering and vibrational excitation cross sections
A study of electron interactions with silicon tetrafluoride : elastic scattering and vibrational excitation cross sections
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电子与四氟化硅相互作用的研究：弹性散射和振动激发截面
DOI：
10.1088/0953-4075/45/9/095204
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
et al
中科院分区：
文献类型：
--
作者：
H.Kato;et al
报道了SiF_4弹性电子散射的绝对微分截面。入射电子能量范围为1.5-200 eV，散射电子角度范围为15-150。以氦为参照物，采用相对流动技术确定了不同截面的绝对标度。从我们的微分测量中得到了相应的积分弹性和动量转移数据。作为这项研究的一部分，还进行了独立的原子模型计算。这些计算结果在微分和积分水平上都与实验结果基本吻合。此外，还报道了ν3(d伸展)和ν4(d变形)基模在散射角60和能量范围1-14 eV范围内的激发函数测量结果。最后给出了单电子能量为7 eV时四个基模(ν1、ν2、ν3、ν4)的微分截面。这些振动激发测量与5-8 eV能量范围内的弹性角分布相结合，证明了AT2对称型共振的存在。
We report absolute differential cross sections for elastic electron scattering from SiF 4. The incident electron energy range is 1.5–200 eV, while the scattered electron angular range was from 15 to 150. The absolute scale of the differential cross sections was set using the relative flow technique with helium as the reference species. Corresponding integral elastic and momentum transfer data have been derived from our differential measurements. As a part of this study, independent atom model calculations were also performed. Those computations were found to be in generally quite good accord with the experimental results at both the differential and integral levels. In addition, excitation function measurements at a scattering angle of 60 and in the energy range 1–14 eV for the ν 3 (d-stretch) and ν 4 (d-deformation) fundamental vibrational modes are reported. Finally, differential cross sections for all four fundamental modes (ν 1, ν 2, ν 3, ν 4) at the single electron energy of 7 eV are given. These vibrational excitation measurements, when coupled with the elastic angular distributions in the 5–8 eV energy range, demonstrate the presence of at 2-symmetry shape resonance.