Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)
Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)
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DOI：
10.1063/1.4894010
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发表时间：
2014-08
影响因子：
4
通讯作者：
S. King;R. Nemanich;R. Davis
中科院分区：
文献类型：
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作者：
S. King;R. Nemanich;R. Davis
为了理解和预测未来的氮化钪（ScN）半导体异质结器件的行为，我们利用原位X射线和紫外光电子能谱（XPS）测量了氨气源分子束外延形成的ScN/3C-SiC（111）和2 H-GaN（0001）/ScN（111）界面的价带偏移（VBO）。ScN/3C-SiC（111）VBO与ScN生长温度和电阻率有关。对于在925 °C（低电阻率）和800 °C（高电阻率）下生长的ScN，分别确定了0.4 ± 0.1和0.1 ± 0.1 eV的VBO。使用先前通过反射电子能量损失光谱法针对925 ° C和800 °C ScN膜确定的1.6 ± 0.2和1.4 ± 0.2 eV的带隙，这些界面的相应导带偏移（CBO）为0.4 ± 0.2和0.9 ± 0.2 eV。对于具有925 °C ScN（111）的GaN（0001）界面，VBO和CBO类似地分别被确定为0.9 ± 0.1和0.9 ± 0.2 eV。
In order to understand and predict the behavior of future scandium nitride (ScN) semiconductor heterostructure devices, we have utilized in situ x-ray and ultra-violet photoelectron spectroscopy to determine the valence band offset (VBO) present at ScN/3C-SiC (111) and 2H-GaN (0001)/ScN (111) interfaces formed by ammonia gas source molecular beam epitaxy. The ScN/3C-SiC (111) VBO was dependent on the ScN growth temperature and resistivity. VBOs of 0.4 ± 0.1 and 0.1 ± 0.1 eV were, respectively, determined for ScN grown at 925 °C (low resistivity) and 800 °C (high resistivity). Using the band-gaps of 1.6 ± 0.2 and 1.4 ± 0.2 eV previously determined by reflection electron energy loss spectroscopy for the 925 and 800 °C ScN films, the respective conduction band offsets (CBO) for these interfaces were 0.4 ± 0.2 and 0.9 ± 0.2 eV. For a GaN (0001) interface with 925 °C ScN (111), the VBO and CBO were similarly determined to be 0.9 ± 0.1 and 0.9 ± 0.2 eV, respectively.