High-resolution electrical detection of free induction decay and Hahn echoes in phosphorus-doped silicon
High-resolution electrical detection of free induction decay and Hahn echoes in phosphorus-doped silicon
复制标题
磷掺杂硅中自由感应衰变和哈恩回波的高分辨率电学检测
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
M. Brandt
中科院分区：
文献类型：
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作者：
Jinming Lu;F. Hoehne;A. Stegner;L. Dreher;H. Huebl;M. Stutzmann;M. Brandt
固态环境中的顺磁中心通常会产生不均匀展宽的电子顺磁共振（EPR）线，使得传统检测到的自由感应衰变（FID）信号在光谱仪死区时间内消失。这里展示了具有天然同位素组成的硅外延层中磷供体的电检测 FID 的实验结果，显示了前 150 ns 内的拉姆齐条纹。开发了一个分析模型来解释所获得的数据以及类似的两脉冲回波实验的结果。进一步给出了数值计算的结果，以评估该方法研究自旋-自旋相互作用的能力。
Paramagnetic centers in a solid-state environment usually give rise to inhomogenously broadened electron paramagnetic resonance (EPR) lines, making conventionally detected free induction decay (FID) signals disappear within the spectrometer dead time. Here, experimental results of an electrically detected FID of phosphorus donors in silicon epilayers with natural isotope composition are presented, showing Ramsey fringes within the first 150 ns. An analytical model is developed to account for the data obtained as well as for the results of analogous two-pulse echo experiments. The results of a numerical calculation are further presented to assess the capability of the method to study spin-spin interactions.