CHARGE-DENSITY WAVES AND LOCALIZATION IN ELECTRON-IRRADIATED 1T-TAS2
CHARGE-DENSITY WAVES AND LOCALIZATION IN ELECTRON-IRRADIATED 1T-TAS2
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DOI：
10.1103/physrevb.23.5030
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发表时间：
1981-01-01
影响因子：
3.7
通讯作者：
BOURGOIN, JC
中科院分区：
文献类型：
--
作者：
MUTKA, H;ZUPPIROLI, L;BOURGOIN, JC
电子输运、与电荷密度波 (CDW) 相关的周期性晶格畸变 (PLD) 和无序之间的关系在 1 T− T a S 2 中进行了实验研究。无序是通过能够置换晶格原子的电子辐射引入的。室温附近稳定的效应是由于钽亚晶格中的位移造成的。辐照引起的缺陷对CDW有强烈的作用；它们固定其相位，因此能够抑制 PLD 指令形成相称的上层结构的相变。纯材料的局域电子基态可以通过轻微的无序破坏来获得金属输运特性。进一步的辐射引起的紊乱导致了新的定位。该序列被解释为从莫特本地化到安德森本地化的变化。
The relations between electronic transport, the periodic lattice distortion (PLD) associated with charge-density waves (CDW), and disorder are studied experimentally in 1 T− T a S 2. Disorder is introduced by means of electron irradiation which is able to displace lattice atoms. The effects stable around room temperature are due to displacements in the tantalum sublattice. The irradiation-induced defects act strongly on the CDW; they pin its phase and are thus able to suppress the phase transitions where the PLD orders to form a commensurate superstructure. The localized electronic ground state of the pure material can be destroyed by slight disorder to obtain metallic transport properties. Further irradiation-induced disorder leads to a new localization. This sequence is interpreted as a change from Mott to Anderson localization.