Radiation hardness properties of full-3D active edge silicon sensors
Radiation hardness properties of full-3D active edge silicon sensors
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DOI：
10.1016/j.nima.2007.12.027
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发表时间：
2008-03-21
影响因子：
1.4
通讯作者：
Pospisil, S.
中科院分区：
文献类型：
--
作者：
Da Via, C.;Hasi, J.;Pospisil, S.
全三维（3D）像素传感器，电极穿透整个硅片，是在斯坦福纳米工厂，斯坦福，加利福尼亚，美国制造的。它们具有71 μ m的电极间距，活动边缘和与ATLAS像素探测器读出电子器件兼容的几何形状。若干样品用不同剂量的中子辐照，辐照当量为8.6 x 10(15) n(1MeVeq) cm（-2）。这与大型强子对撞机（LHC）在距离ATLAS b层所在的相互作用点4厘米处的光度为10(35)cm(-2) s（-1）的情况下，大约5年后预计的综合影响相对应。在辐照前后，通过1060 nm红外激光器校准注入14fc电荷产生信号。这相当于3.5个最小电离粒子，不应扰乱辐射诱导缺陷的电荷状态。在8.6 x 10(15) n(1MeVeq) cm（-2）后，收集到的信号与38%相似，对应于衬底厚度为235 pm时的信号与7200e（-）相似。讨论了信号效率、辐射泄漏电流及相关损伤参数，并与仿真结果进行了比较。具有活动边缘的全三维硅探测器正在考虑用于大型强子对撞机的正向质子标记、ATLAS像素b层替换和ATLAS像素升级。(C) 2007 Elsevier B.V.版权所有
Full-three-dimensional (3D) pixel sensors, with electrodes penetrating through the entire silicon wafer, were fabricated at the Stanford Nanofabrication Facility, Stanford, California, USA. They have 71-mu m-inter-electrode spacing, active edges and a compatible geometry to the ATLAS pixel detector readout electronics. Several samples were irradiated with neutrons to different doses up to an equivalent fluence of 8.6 x 10(15) n(1MeVeq) cm(-2). This corresponds to the integrated fluence expected after similar to 5 years at the Large Hadron Collider (LHC) with a luminosity of 10(35) cm(-2) s(-1) at 4 cm from the interaction point, where the ATLAS B-Layer is placed. Before and after irradiation, signals were generated by a 1060 nm infrared laser calibrated to inject a charge of 14 fC. This corresponds to similar to 3.5 minimum ionizing particles and should not perturb the charge status of the radiation-induced defects.After 8.6 x 10(15) n(1MeVeq) cm(-2) the signal collected was similar to 38% and corresponded to similar to 7200e(-) for a substrate thickness of 235 pm. Signal efficiency, radiation-induced leakage current and related damage parameters are discussed here and compared with simulations. Full-3D silicon detectors with active edges are being considered for forward proton tagging at the LHC, for the ATLAS pixel B-layer replacement and for the ATLAS pixel upgrade. (C) 2007 Elsevier B.V. All rights reserved.