High-frequency performance projections for ballistic carbon-nanotube transistors
High-frequency performance projections for ballistic carbon-nanotube transistors
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DOI：
10.1109/tnano.2005.858594
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发表时间：
2006
影响因子：
2.4
通讯作者：
S. Hasan;S. Salahuddin;M. Vaidyanathan;M. A. Alam
中科院分区：
文献类型：
--
作者：
S. Hasan;S. Salahuddin;M. Vaidyanathan;M. A. Alam
准静态方法结合弹道纳米晶体管的理论来评估碳纳米管场效应晶体管的高频性能潜力。一个简单的等效电路，它适用于在弹道极限的操作，开发的本征器件，然后用来确定的单位电流增益频率（f/sub T/）与栅极电压的行为。该电路被证明是减少到预期的形式，在所谓的“MOS”和“双极”的限制。f/sub T/在高栅极电压下接近最大值v/sub F//2/spl pi/L/spl ap/130 GHz/L（/spl mu/m），其中v/sub F/是纳米管的费米速度，L是沟道长度，并且由于源极和漏极静电电容的存在而在低栅极电压下下降。还讨论了栅静电电容对f/sub T/的影响。数值模拟的“类MEMS”或“批量开关”碳纳米管晶体管的结果支持的结论。
A quasi-static approach is combined with a theory of ballistic nanotransistors to assess the high-frequency performance potential of carbon-nanotube field-effect transistors. A simple equivalent circuit, which applies in the ballistic limit of operation, is developed for the intrinsic device, and then employed to determine the behavior of the unity-current-gain frequency (f/sub T/) with gate voltage. The circuit is shown to reduce to the expected forms in the so-called "MOS" and "bipolar" limits. The f/sub T/ is shown to approach a maximum value of v/sub F//2/spl pi/L/spl ap/130 GHz/L (/spl mu/m) at high gate voltage, where v/sub F/ is the nanotube's Fermi velocity and L is the channel length, and to fall at low gate voltage due to the presence of source and drain electrostatic capacitances. The impact of the gate electrostatic capacitance on the f/sub T/ is also discussed. Numerical simulations on a "MOSFET-like" or "bulk-switched" carbon-nanotube transistor are shown to support the conclusions.