Correlation between structure, microstructure, and ferroelectric properties of PbZr0.2Ti0.8O3 integrated film: Influence of the sol-gel process and the substrate
Correlation between structure, microstructure, and ferroelectric properties of PbZr0.2Ti0.8O3 integrated film: Influence of the sol-gel process and the substrate
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PbZr0.2Ti0.8O3集成薄膜的结构、微观结构和铁电性能的相关性：溶胶-凝胶工艺和基底的影响
DOI：
10.1063/1.368560
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
P. Gaucher
中科院分区：
文献类型：
--
作者：
N. Floquet;J. Hector;P. Gaucher
在衬底上沉积成薄膜的铁电材料的性能取决于制备方法和所使用的衬底的性质。本工作通过X射线衍射对铁电薄膜的结构修饰(晶胞参数、择优取向)和微结构修饰(铁电畴排列)进行了精细的表征，并对铁电薄膜的制备方法(溶胶凝胶法、热解、退火)和衬底的性质(晶体结构、晶体取向、热膨胀系数)进行了电测量。由于精加工过程，锆钛酸铅薄膜的颗粒尺寸小于0.3μm，因此改变了晶胞参数(较高的a参数，较小的c参数，从而较小的c/a四方性)。热处理在PZT薄膜和衬底之间产生了特定的应力，从而改变了PZT颗粒的铁电微区结构：微应力随温度的变化而变化。
The properties of a ferroelectric material deposed as a thin film on a substrate depend on the method of preparation and on the nature of the substrate used. The present work reports fine characterization by x-ray diffraction of structural modifications (cell parameters, preferential orientations) and microstructural modifications (ferroelectric domain arrangement) and electric measurements of a ferroelectric film as a function of its method of preparation (sol-gel process, pyrolysis, annealing) and the nature of its substrate (crystalline structure, crystallographic orientation, thermal coefficient of dilation). Due to the elaboration process, lead zirconate titanate (PZT) films have grain size smaller than 0.3 μm and consequently modified cell parameters (higher a parameter, smaller c parameter, and consequently smaller c/a tetragonality). Thermal treatment induces specific stresses between the PZT film and the substrate that modify the ferroelectric domain microstructure of the PZT grains: the microstr...