Spatially resolved excitation of Rydberg atoms and surface effects on an atom chip
Spatially resolved excitation of Rydberg atoms and surface effects on an atom chip
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里德伯原子的空间分辨激发和原子芯片上的表面效应
DOI：
10.1103/physreva.81.063411
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发表时间：
2010
影响因子：
2.9
通讯作者：
R. Spreeuw
中科院分区：
文献类型：
--
作者：
A. Tauschinsky;R. Thijssen;Shannon Whitlock;H. Heuvell;R. Spreeuw
我们在原子芯片上展示了空间分辨的、相干的里德伯原子激发。采用电磁感应透明（EIT）技术研究了镀金芯片表面附近里德伯原子的性质。我们测量了由空间非均匀电场引起的里德堡能级的距离相关位移（{约}10 MHz）。实测的场强和距离依赖关系与实验中沉积在芯片表面的Rb吸附剂局部斑块产生的电场的简单模型一致。EIT共振仍然很窄（<4 MHz），观察到的宽度与原子表面距离无关，低至{约}20 {mu}m，表明Rydberg态的寿命相对较长。我们的研究结果为偶极物理、集体激发、量子计量学和涉及原子芯片上的里德伯激发原子相互作用的量子信息处理的研究开辟了道路。
We demonstrate spatially resolved, coherent excitation of Rydberg atoms on an atom chip. Electromagnetically induced transparency (EIT) is used to investigate the properties of the Rydberg atoms near the gold-coated chip surface. We measure distance-dependent shifts ({approx}10 MHz) of the Rydberg energy levels caused by a spatially inhomogeneous electric field. The measured field strength and distance dependence is in agreement with a simple model for the electric field produced by a localized patch of Rb adsorbates deposited on the chip surface during experiments. The EIT resonances remain narrow (<4 MHz) and the observed widths are independent of atom-surface distance down to {approx} 20 {mu}m, indicating relatively long lifetime of the Rydberg states. Our results open the way to studies of dipolar physics, collective excitations, quantum metrology, and quantum information processing involving interacting Rydberg excited atoms on atom chips.