A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate
A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate
复制标题
具有自偏置分裂栅极的高速深沟槽 MOSFET
DOI：
10.1109/ted.2010.2051247
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发表时间：
2010-08-01
影响因子：
3.1
通讯作者：
Chen, Xingbi
中科院分区：
文献类型：
--
作者：
Jiang, Qimeng;Wang, Minzhi;Chen, Xingbi
提出了一种分裂栅自偏置集成低压电源的分裂栅深沟槽MOSFET（DT-MOS）。由于分裂栅极被偏置到近似恒定的电压，与传统的DT-MOS相比，该结构具有更少量的栅极到漏极电荷Q（gd），而不增加特定导通电阻R-on。数值模拟结果表明，优化因子（FOM = Q（gd）. R-on）与传统的DT-MOS相比大大降低。
A split-gate deep-trench MOSFET (DT-MOS) with its split gate self-biased to an integrated low voltage supply is proposed. Due to the split gate being biased to an approximately constant voltage, this structure has a smaller amount of gate-to-drain charge Q(gd) without increase in the specific on-resistance R-on, compared with the conventional DT-MOS. Numerical simulation results show that the figure of merit (FOM = Q(gd) . R-on) is largely reduced, compared with that of the conventional DT-MOS.