Quantitative TEM analysis of Al/Cu multilayer systems prepared by pulsed laser deposition
Quantitative TEM analysis of Al/Cu multilayer systems prepared by pulsed laser deposition
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DOI：
10.1007/s00339-010-5923-6
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发表时间：
2010-07
期刊：
影响因子：
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通讯作者：
H. H. Liu-H.;N. Pryds;J. Schou;X. Huang
中科院分区：
文献类型：
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作者：
H. H. Liu-H.;N. Pryds;J. Schou;X. Huang
采用脉冲激光沉积（PLD）在（111）Si衬底上沉积了由Al/Cu/Al交替层组成的薄膜。膜和各层的厚度以及层内的详细内部结构通过透射电子显微镜（TEM）、高分辨率TEM（HRTEM）和能量过滤TEM（EFTEM）来表征。每个Al或Cu层由不同取向的纳米尺寸晶粒的单层组成。EFTEM结果显示在Si衬底的表面上约2nm厚的氧化物层，这被认为是形成第一层纳米尺寸的Al晶粒的原因。结果表明，PLD技术是制备厚度和晶粒尺寸可控的纳米多层金属薄膜的有力工具。
Thin films composed of alternating Al/Cu/Al layers were deposited on a (111) Si substrate using pulsed laser deposition (PLD). The thicknesses of the film and the individual layers, and the detailed internal structure within the layers were characterized by means of transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and energy-filtered TEM (EFTEM). Each Al or Cu layer consists of a single layer of nano-sized grains of different orientations. EFTEM results revealed a layer of oxide about 2 nm thick on the surface of the Si substrate, which is considered to be the reason for the formation of the first layer of nano-sized Al grains. The results demonstrate that the PLD technique is a powerful tool to produce nano-scale multilayered metal films with controllable thickness and grain sizes.