Dependence of the Flatband Voltage of Si‐MOS on Distribution of Cesium in SiO2 : Comparison of Two Implantation Methods
Dependence of the Flatband Voltage of Si‐MOS on Distribution of Cesium in SiO2 : Comparison of Two Implantation Methods
复制标题
Si-MOS 的平带电压对 SiO2 中铯分布的依赖性：两种注入方法的比较
DOI：
10.1149/1.2109000
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发表时间：
1986
影响因子：
3.9
通讯作者：
L. Krusin
中科院分区：
文献类型：
--
作者：
L. Krusin
本文研究了二次离子质谱法测量的Si - MOS结构的平带电压位移与铯离子的物理分布之间的关系。Cs直接注入Si和Si，随后的氧化物生长导致不同的轮廓取决于热处理。在第一种情况下，相应的负电荷随铯的加入量的增加而增加，而在后一种情况下，负电荷还取决于界面处铯峰的高度。Cs对界面态密度的影响很小。
Correlation between measured shifts in the flatband voltage, , of Si‐MOS structure and physical distribution of cesium ions in as measured by secondary ion mass spectrometry has been investigated. Direct implantation of Cs into and into Si with the subsequent oxide growth results in different profiles that depend on thermal processing. Corresponding negative are increasing with the amount of Cs in in the first case and in the latter case depend also on the height of cesium peak at interface. The change in the interface state density due to Cs is small.