Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials
Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials
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DOI：
10.1039/b919574b
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发表时间：
2010-01-01
影响因子：
--
通讯作者：
Hursthouse, Michael B.
中科院分区：
文献类型：
--
作者：
Afonina, Irina;Skabara, Peter J.;Hursthouse, Michael B.
合成了三种新的二茚二噻吩并噻吩（DITT）基材料，并研究了它们的电化学性能。观察到HOMO-LUMO带隙分别为3.33、3.48和2.81 eV。循环伏安法结果表明，烷基化衍生物的稳定性增加。二氧化物表现出很强的光致发光，在溶液中的光致发光量子产率为0.72，在固态下为0.14。对非烷基化衍生物进行空穴迁移率测量，相应的值与10（-4）cm（2）V-1 s（-1）相似。
Three new diindenodithienothiophene (DITT) based materials were synthesised and their electrochemical properties investigated. The HOMO-LUMO gaps were observed to be 3.33, 3.48 and 2.81 eV, respectively. Cyclic voltammetry results indicate increased stability for the alkylated derivatives. The dioxide exhibits strong photoluminescence, giving a photoluminescence quantum yield of 0.72 in solution and 0.14 in the solid state. Hole mobility measurements were carried out on the non-alkylated derivative and the corresponding values were similar to 10(-4) cm(2) V-1 s(-1).