Improvement of light extraction from high-power flip-chip light-emitting diodes by femtosecond laser direct structuring of the sapphire backside surface
Improvement of light extraction from high-power flip-chip light-emitting diodes by femtosecond laser direct structuring of the sapphire backside surface
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DOI：
10.1063/1.2981203
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发表时间：
2008-10
影响因子：
3.2
通讯作者：
L. Kuna;A. Haase;C. Sommer;E. Zinterl;J. Krenn;F. Wenzl;P. Pachler;P. Hartmann;S. Tasch;G. Leising
中科院分区：
文献类型：
--
作者：
L. Kuna;A. Haase;C. Sommer;E. Zinterl;J. Krenn;F. Wenzl;P. Pachler;P. Hartmann;S. Tasch;G. Leising
我们报告的结构的背面蓝宝石衬底的高功率倒装芯片发光二极管（LED）的飞秒激光直写。已经发现改变激光功率会影响亚微米尺度上的雕刻图案的尺寸，这有利于以高精度控制结构尺寸。因此，由于一方面光提取效率显示出对图案尺寸的强烈依赖性，另一方面，飞秒激光结构化提供了简单的机会来沿LED表面沿着刻划不同的结构，因此可以制造具有横向控制的光提取效率的LED。
We report on the structuring of the backside surface of sapphire substrates in high-power flip-chip light-emitting diodes (LEDs) by femtosecond laser direct writing. Varying the laser powers has been found to affect the sizes of the inscribed patterns on a submicron scale which facilitates the control of the structure sizes with high precision. Accordingly, since on the one hand the light extraction efficiency reveals a strong dependence on pattern sizes, and on the other hand, femtosecond laser structuring provides a simple opportunity to inscribe diverse structures along the LED surfaces, LEDs with laterally controlled light extraction efficiencies can be fabricated.